r08ds0064ej0200 rev.2.00 page 1 of 7 jun 20, 2013 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary data sheet NV4V41SF blue-violet laser diode 405 nm blue-violet laser light source description the NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. a newly developed ld chip structure achieves a high optical power output of 600 mw (cw). features ? high optical output power p o = 600 mw @cw ? peak wavelength p = 400 to 405 nm ? multi transverse mode (lateral) ? operating temperature range t c = 0 to +30 c ? 5.6 mm can package applications ? blue-violet laser light source ? light source for laser direct imaging system ? light source for industrial manufacturing equipment r08ds0064ej0200 rev.2.00 jun 20, 2013
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 2 of 7 jun 20, 2013 package dimensions (unit: mm) bottom view 1 2 3 0.4 0.1 0.5 min. 0.4 0.1 1.0 0.15 2.0 0.2 cap glass ld chip stem reference plain p.c.d. 3 (stem gnd) 2 1 ld 90 2 y x z 1.6 0.2 6.50.5 1.30.08 1.20.1 2.30.3 3? 0.450.1 3.550.1 4.5 max. pin connections remark cap glass thickness : 0.250.03 mm cap glass refractive index : 1.53 ( = 405 nm) 5.60.1
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 3 of 7 jun 20, 2013 ordering information part number order number rank packing style NV4V41SF-a hv tray packing (100 p/tray), with data NV4V41SF xv individual packing (for samples), with data absolute maximum ratings (t c = 25 c, unless otherwise specified) parameter symbol ratings unit optical output power (cw) p o 700 mw reverse voltage of ld v r 2 v operating case temperature t c 0 to +30 c storage temperature t stg ? 40 to +85 c recommended operating conditions (t c = 25 c, unless otherwise specified) parameter symbol max. unit optical output power (cw) p o 600 mw electro-optical characteristics (t c = 25 c, unless otherwise specified) parameter symbol conditions min. typ. max. unit threshold current i th cw 140 180 ma operating current i op cw, p o = 600 mw 500 600 ma operating voltage v op cw, p o = 600 mw 4.1 4.6 v slope efficiency d cw, p o = 100 mw, 600 mw 1.0 1.7 w/a peak wavelength p cw, p o = 600 mw 400 ? 405 nm beam divergence (lateral) // 10 16 22 deg. beam divergence (vertical) cw, p o = 600 mw (1/e 2 ) 35 40 50 position accuracy angle (vertical) ? cw, p o = 600 mw ? 5 ? 5 deg.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 4 of 7 jun 20, 2013 typical characteristics (t c = 25 c, unless otherwise specified ) 399 0 200 400 600 800 406 405 404 403 402 401 400 0.0038 nm/mw 399 0 1020304050 406 405 404 403 402 401 400 0 700 100 200 300 400 500 600 0 700 500 600 300 400 100 200 10 c 20 c 30 c 40 c 0 700 100 200 300 400 500 600 0 6 4 5 2 3 1 10 c 20 c 30 c 40 c 25 c n= 5 0.079 nm/ c 600 mw n= 5 ? 30 ? 20 ? 10 0 10 20 30 600 mw 400 mw 200 mw ? 40 ? 30 ? 20 ? 10 0 10 20 40 30 600 mw 400 mw 200 mw optical output power p o (mw) peak wavelength p (nm) optical output power vs. forward current forward current i f (ma) optical output power p o (mw) forward voltage vs. forward current forward current i f (ma) forward voltage v f (v) power dependence of peak wavelength temperature dependence of peak wavelength ffp (lateral) beam divergence (degrees) relative intensity ffp (vertical) beam divergence (degrees) relative intensity temperature ( c) peak wavelength p (nm) remark the graphs indicate nominal characteristics.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 5 of 7 jun 20, 2013 0.2 0.4 406 401 400 403 404 405 0 1.2 1.0 0.6 0.8 10 c 25 c 40 c 600 mw wavelength spectrum wavelength (nm) relative intensity remark the graphs indicate nominal characteristics.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 6 of 7 jun 20, 2013 notes on handling (unit: mm) 1. recommended soldering conditions ? peak temperature 350 c ? time 3 seconds ? soldering of leads should be made at the point 2.0 mm from the root of the lead ? this device cannot be mounted using reflow soldering. 2. usage cautions (1) take the following steps to ensure that the device is not damaged by static electricity. ? wear an antistatic wrist strap when soldering the device. we recommend a strap with a 1 m resistor. ? make sure that the work table and soldering iron are grounded. ? make sure that the soldering iron does not leak. (2) do not subject the package to undue stress. the package has a tensile strength of 1n or less. do not exceed this rating. also, avoid be nding the leads as much as possible. if the leads must be bent, bend them only once, making sure to anchor the stem base of the lead. (3) do not allow the cap glass of the package to become scratched or dirty. also, do not subject the cap glass to external force. (4) be sure to attach a heat si nk to sufficiently dissipate heat. (5) use the device as soon as possible after opening the bag.
NV4V41SF chapter title r08ds0064ej0200 rev.2.00 page 7 of 7 jun 20, 2013 safety information on this product danger visible laser radiation avoid eye or skin exposure to direct or scattered radiation output power 3w max wavelength 400 to 680nm class iv laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warning laser beam a laser beam is emitted from this diode during operation. if the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight. (note that, depending on the wavelength of the be am, the laser beam might not be visible.) ? do not look directly into the laser beam. ? avoid exposure to the laser beam, any reflected or collimated beam.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history NV4V41SF data sheet description rev. date page summary 0.01 jul 11, 2012 ? first edition issued throughout this data sheet is officially released (preliminary data sheet becomes data sheet). the typical values of threshold cu rrent and operating voltage are changed in electro-optical characteristics. p.3 the unit, ?(1/e 2 )?, is deleted from the value of p o . 1.00 jan 09, 2013 pp.4,5 typical characteristics is added. 2.00 jun 20, 2013 p.2 modification of package dimensions p.3 modification of ordering information
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